近日，韩国浦项科技大学Yong-Young Noh团队报道了锡钙钛矿晶体管通过挥发性配位稳定。2026年7月1日出版的《自然》杂志发表了这一最新研究成果。

锡（Sn²⁺）卤化物钙钛矿因其带隙可调且电荷传输性能优良，是有望用于光电器件和电子器件的无铅半导体材料。然而，其实际应用在根本上受限于欠配位Sn²⁺位点处固有的氧化还原不稳定性，该不稳定性会导致失控的自p型掺杂和快速的氧化降解。

研究组提出一种挥发辅助配位策略，通过乙酸根的瞬态配位与挥发过程实现钙钛矿表面的重构，从而将反应性的SnI₂封端表面转化为化学平衡且缺陷钝化的界面。这种表面重构抑制了与欠配位Sn相关的陷阱态，并稳定了局域化学计量比，进而使p型晶体管具备了稳健的输运特性、接近零的阈值电压以及超过10⁸的高开关比。更重要的是，重构后的界面充当一种自钝化且耐热的阻挡层，显著提升了环境稳定性，器件在100 °C下可保持稳定运行超过1个月。这些结果确立了挥发辅助表面重构作为一种有效方法，可用于亚稳态半导体的缺陷平衡，并为在Sn²⁺基材料中实现耐用且具备器件级功能的应用提供了通用策略。

附：英文原文

Title: Tin perovskite transistors stabilized through volatile coordination

Author: Park, Geonwoong, Lee, Dong Hyeon, Reo, Youjin, Yang, Wonryeol, Yoo, Soohwan, Park, Wantae, Jung, Hyeyeon, Kim, Hyesun, Cho, Sungjae, Kwon, Mingoo, Ryu, Sunmin, Du, Liping, Liu, Ao, Park, Ji-Sang, Zhu, Huihui, Noh, Yong-Young

Issue&Volume: 2026-07-01

Abstract: Tin (Sn2+) halide perovskites are promising lead-free semiconductors for optoelectronic and electronic devices, owing to their tunable bandgaps and favourable charge transport1,2. However, their practical implementation is fundamentally limited by an intrinsic redox instability at undercoordinated Sn2+ sites, which drives uncontrolled self-p-doping and rapid oxidative degradation3,4. Here we introduce a volatile-assisted coordination strategy that reconstructs the perovskite surface through transient acetate coordination and volatilization, which transforms reactive SnI2-terminated surfaces into chemically equilibrated and defect-mitigated interfaces. This surface reconstruction suppresses undercoordinated Sn-related trap states and stabilizes the local stoichiometry, thus enabling p-type transistors with robust transport characteristics, a near-zero threshold voltage and high on/off ratios exceeding 108. More importantly, the reconstructed interface acts as a self-passivating and thermally resilient barrier, resulting in markedly enhanced environmental stability, with devices maintaining stable operation for over 1month at 100°C. These results establish volatile-assisted surface reconstruction as an effective method for defect equilibration in metastable semiconductors, and they provide a general strategy for enabling durable, device-grade functionality in Sn2+-based materials.

DOI: 10.1038/s41586-026-10714-1

Source: https://www.nature.com/articles/s41586-026-10714-1