近日，中国科学技术大学陈涛团队研究了内部均结Sb2Se3太阳能电池。相关论文于2026年4月13日发表在《自然—光子学》杂志上。
硒化锑（Sb2Se3）因其理想的带隙（1.1–1.3 eV）、高吸收系数（>105 cm-1）以及环境友好的组成，已成为一种颇具前景的薄膜光伏吸收层材料。然而，Sb2Se3太阳能电池（SSC）通常存在较大的开路电压损失，这归因于其内建电场较弱，以及界面和吸收层内部的严重非辐射复合。
研究组展示了一种用于调控载流子极性的组分驱动策略，并利用该策略在Sb2Se3吸收层内部形成了n型/p型同质结。通过精确调控Se和Sb的化学势，研究组能够操控导电类型，并实现n型和p型状态下超过1014 cm-3的载流子浓度。基于这一材料设计，研究组证明将p–n同质结集成到平面SSC中，能够同时增强内建电场并钝化深能级缺陷。
这些协同效应促进了载流子分离，减少了非辐射复合，并加速了载流子提取。最终，这种内建同质结增强的SSC在热蒸发制备的Sb2Se3器件上实现了10.15%的功率转换效率，以及低至0.459 V的开路电压亏损。该研究为SSCs提出了一种概念验证型的器件结构，为提高器件效率开辟了新途径。
附：英文原文
Title: Internal homojunction Sb2Se3 solar cell
Author: Yang, Junjie, Li, Jianyu, Sheng, Shuwei, Cai, Zhiyuan, Li, Ke, Ruan, Zichen, Che, Bo, Tang, Rongfeng, Chen, Tao
Issue&Volume: 2026-04-13
Abstract: Antimony selenide (Sb2Se3) has emerged as a promising thin-film photovoltaic absorber due to its ideal bandgap (1.1–1.3eV), high absorption coefficient (>105cm1) and environmentally benign composition. However, Sb2Se3 solar cells (SSCs) often suffer from large open-circuit voltage losses owing to the weak built-in fields and severe non-radiative recombination at the interfaces and within the absorber layer. Here we demonstrate a composition-driven strategy for controlling carrier polarity that we used to form an n-type/p-type homojunction within the Sb2Se3 absorber layer. By precisely tuning the chemical potentials of Se and Sb, we are able to manipulate the conductivity type and achieve carrier densities exceeding 1014cm3 for the n- and p-type states. With this materials design, we demonstrate that incorporating the p–n homojunction into a planar SSC simultaneously enhances the built-in electric field and passivates deep-level defects. These synergistic effects promote carrier separation, reduce non-radiative recombination and accelerate carrier extraction. As a result, the internal-homojunction-enhanced SSC delivers a power conversion efficiency of 10.15% for thermally evaporated Sb2Se3 devices and an ultralow open-circuit voltage deficit of 0.459V. This study proposes a proof-of-concept device structure for SSCs that opens a new pathway for improving device efficiency.
DOI: 10.1038/s41566-026-01888-1
Source: https://www.nature.com/articles/s41566-026-01888-1