近日，南京邮电大学解令海团队报道了基于卡唑基聚合物驻极体的双荧光增强OFET存储器的光恢复行为。相关论文发表在2026年4月6日出版的《中国化学》杂志上。

光响应有机场效应晶体管（OFET）存储器的最新进展表明，引入光偏置作为第四端控制具有显著优势。

研究组通过傅-克聚合反应设计并合成了三种新型咔唑基聚合物。这些聚合物用作光响应驻极体，其中咔唑基团充当电荷捕获位点和光活性单元。基于溶液加工PAnCz的并五苯OFET存储器件具有大存储窗口（54.4 V）、快速编程速度（<20 ms）、高空穴捕获密度（4.61 × 10¹² cm^-2）以及可靠的电荷保持能力。

与PDFlCz器件相比，PAnCz和PDPhCz器件的光恢复效率显著提高。这一优异性能归因于它们在350 nm（0.6 mW/cm²）光照下的双荧光发射。双荧光现象有助于光生载流子的高效产生、分离和复合，从而提高了器件的光调制效率。该研究表明，双荧光聚咔唑驻极体是一类用于光响应OFET存储器的有前景的材料平台。

附：英文原文

Title: Dual Fluorescence Enhanced Photorecovery Behavior of OFET Memories Based on Carbazole-Based Polymer Electrets

Author: Linyi Bian, Yue Zhang, Zhaocheng Xu, Jincheng Zhu, Wang Peng, Jun Chen, Shuaiqi Zhou, Qiushuo Han, Xinyang Zhou, Guangwei Zhang, Haifeng Ling, Linghai Xie

Issue&Volume: 2026-04-06

Abstract: Recent advances in photoresponsive OFET memories have demonstrated the significant benefits of incorporating optical bias as a fourth terminal control. Herein, three novel carbazole-based polymers are designed and synthesized via Friedel-Crafts polymerization. The polymers serve as photoresponsive electrets, where carbazole moieties act as charge-trapping sites and photoactive units. The penta-cene-based OFET memory device incorporating solution-processed PAnCz exhibits a large memory window (54.4 V), fast programming speed (<20 ms), high hole-trapping density (4.61 ×1012 cm–2) and reliable charge retention. PAnCz and PDPhCz devices demonstrate significantly improved photorecovery efficiency compared to that of PDFlCz. The superior performance is attributed to their dual fluo-rescence emission under 350 nm (0.6 mW/cm2) light illumination. The dual fluorescence phenomenon facilitates efficient generation, separation and recombination of photocarriers, which consequently improves the photomodulation efficiency of the devices. This study suggests that dual-fluorescent polycarbazole electrets represent a promising materials platform for photoresponsive OFET memory.

DOI: 10.1002/cjoc.70577

Source: https://onlinelibrary.wiley.com/doi/10.1002/cjoc.70577