近日，广东工业大学张紫辉团队报道了通过激发极化栅光电晶体管使紫外光可见，可实现能量转移到氮化镓基蓝色发射。相关论文于2026年3月10日发表在《光：科学与应用》杂志上。

研究组通过提出并制备一种集成光电器件，实现了紫外光的可视化。所展示的器件由基于氮化镓的蓝色微型发光二极管（mini-LED）和光电晶体管构成。该光电晶体管特别设计了Al_0.20Ga_0.80N极化栅极，在无紫外光照时，极化栅极可耗尽背景电子，使集成光电器件实现常关状态。

测量结果表明，当极化栅控光电晶体管关断时，即使器件偏压达到10 V，集成光电器件的电流仍低至1.4×10^-4 mA。在12.7 mW紫外光激发下，10.0 V偏压时集成器件的电流可增至44.4 mA，使得氮化镓基可见光微型LED能产生81.1 mW的光功率。紫外激发光与微型LED发光的最大功率比可达49.8倍，表明采用该设计方案监测微弱紫外光具有显著优势。

附：英文原文

Title: Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission

Author: Chu, Chunshuang, Jiang, Yao, He, Conglin, Li, Wenjie, Tian, Kangkai, Zhang, Yonghui, Sun, Xiaowei, Zhang, Zi-Hui

Issue&Volume: 2026-03-10

Abstract: In this work, we have made ultraviolet (UV) light visible by proposing and fabricating an integrated optoelectronic device. The demonstrated device consists of a GaN-based blue mini-light-emitting diode (mini-LED) and a phototransistor. The phototransistor is specially designed with an Al0.20Ga0.80N polarization gate. The background electrons can be depleted by the polarization gate to enable the normally-off state for the integrated optoelectronic device when there is no UV illumination. Our measured results show that when the polarization-gated phototransistor is switched off, the current for the integrated optoelectronic device is as low as 1.4×104mA even when the device is biased to 10V. Upon the 12.7mW UV excitation, the current for the integrated device can be increased to 44.4mA at the bias of 10.0V. This enables the GaN-based visible mini-LED to generate the optical power of 81.1mW. The largest power ratio between the UV excitation light and the mini-LED light of 49.8 times can be achieved, indicating the advantage of monitoring weak UV light by using the proposed design.

DOI: 10.1038/s41377-026-02242-4

Source: https://www.nature.com/articles/s41377-026-02242-4