近日，北京大学张锦团队报道了触发点阵氧释放用于半导体碳纳米管阵列合成。这一研究成果于2025年8月26日发表在《美国化学会志》上。

金属氧化物中的晶格氧为先进的催化剂设计提供了潜在的途径，包括用于半导体单壁碳纳米管（s-SWCNTs）选择性生长的催化剂。

研究组通过对氧化物催化剂的晶格氧触发（LOT）策略，将晶格氧释放通量增加到10⁵。通过在蓝宝石衬底中注入钛（Ti）和铁（Fe）元素，然后通过退火过程使钛迁移到表面，并在蓝宝石晶格中稳定取代铁来实现LOT策略。LOT过程发生在铁原子掺杂到钛氧化物中，形成SWCNT生长的催化剂。

连续释放的晶格氧作为原位蚀刻剂，用于精确去除金属管，从而直接合成纯度为98%的水平排列的s-SWCNT阵列。基于s-SWCNT阵列的场效应晶体管具有60 mV dec^-1的超低亚阈值摆幅和2291 cm²·V^-1·s^-1的高载流子迁移率。这种LOT策略为调整晶格氧动力学和热力学建立了一个范例，为纳米材料合成中以氧为中心的催化剂设计开辟了道路。

附：英文原文

Title: Triggering Lattice Oxygen Release for Semiconducting Carbon Nanotube Array Synthesis

Author: Zhe Liu, Hao Li, Zhisheng Peng, Mingzhi Zou, Zhenghang Yu, Yue Li, Zanlin Qiu, Xiucai Sun, Liu Qian, Jin Zhang

Issue&Volume: August 26, 2025

Abstract: Lattice oxygen in metal oxides offers potential pathways for advanced catalyst design, including catalysts for the selective growth of semiconducting single-walled carbon nanotubes (s-SWCNTs). In this study, an increase of lattice-oxygen release flux up to 105 is achieved via a lattice oxygen triggering (LOT) strategy for oxide catalysts. The LOT strategy is experimentally realized by ion implantation of titanium (Ti) and iron (Fe) elements into the sapphire substrate, followed by an annealing process for Ti migration onto the surface and Fe stable substitution in the sapphire lattice. The LOT process occurs when Fe atoms dope into Ti oxides, forming the catalysts for SWCNT growth. The continuously released lattice oxygen serves as an in situ etchant for precise removal of metallic tubes, resulting in the direct synthesis of horizontally aligned s-SWCNT arrays with >98% purity. Field-effect transistors based on the s-SWCNT arrays exhibit ultralow subthreshold swing of 60 mV dec–1, and high carrier mobility of 2291 cm2·V–1·s–1. This LOT strategy establishes a paradigm for tuning lattice oxygen kinetics and thermodynamics, opening avenues for an oxygen-centric catalyst design in nanomaterial synthesis.

DOI: 10.1021/jacs.5c08656

Source: https://pubs.acs.org/doi/abs/10.1021/jacs.5c08656