近日，西北工业大学黄维团队报道了激子管理和平衡电荷载流子输运实现高效的有机场效应发光晶体管。相关论文于2025年11月10日发表在《自然—光子学》杂志上。
有机发光晶体管将晶体管的开关功能与有机发光二极管的发光特性相结合。其中，有机场效应发光晶体管（OFE-LETs）因其简化器件结构、低漏电流和易于集成等优势，近年来受到越来越多关注。然而，OFE-LETs常面临电子与空穴输运不平衡的问题，导致发光层中辐射复合效率低下，器件整体效率不高。
研究组提出了一种具有前景的器件架构，通过将载流子输运与发光功能在空间上分离，实现了对激子的精准调控。采用咔唑/噁二唑杂化分子并引入强电子吸引基团氰基，有效平衡了载流子输运，形成宽域激子复合区，显著提升了辐射复合效率。实验结果表明，红、绿、蓝三色OFE-LETs分别达到18.4%、21.2%和14.4%的峰值外量子效率，以及26.9、78.0和31.7 cd A-1的电流效率，这些指标均达到有机发光晶体管领域的最高水平。此外，开口率超过60%的图案化OFE-LET阵列，配合仅5.6%寄生功耗的像素电路，展现出在低功耗显示技术中的巨大应用潜力。
附：英文原文
Title: Exciton management and balanced charge-carrier transport enable efficient organic field-effect light-emitting transistors
Author: Li, Donghai, Hou, Yuchen, Wang, Jian, Xing, Shen, Shen, Zihong, Tao, Yeting, Liu, Yuan, Yuan, Wenbo, Liu, Xiaowang, Xu, Weidong, Li, Xiangchun, Leo, Karl, Wu, Zhongbin, Tao, Youtian, Huang, Wei
Issue&Volume: 2025-11-10
Abstract: Organic light-emitting transistors integrate the switching ability of a transistor with the emissive property of an organic light-emitting diode. Among them, organic field-effect light-emitting transistors (OFE-LETs) have recently gained increasing attention due to their simplified device structure, low leakage current and ease of integration. However, OFE-LETs often suffer from unbalanced electron and hole transport, leading to a low radiative recombination efficiency in the emissive layer and low device efficiency. Here we present a promising device architecture in which the functions of charge-carrier transport and light emission are spatially separated, enabling precise exciton management. The use of carbazole/oxadiazole hybrid molecules coupled with a strong electron-withdrawing cyano moiety results in balanced charge-carrier transport, creating a broad exciton recombination zone and enhancing the radiative recombination efficiency. Accordingly, red, green and blue OFE-LETs achieve peak external quantum efficiencies of 18.4, 21.2 and 14.4%, and current efficiencies of 26.9, 78.0 and 31.7cdA1, respectively. These values rank among the highest for organic light-emitting transistors so far. Furthermore, the patterned OFE-LET arrays with an aperture ratio of over 60% and pixel circuits that exhibit only 5.6% parasitic power dissipation demonstrate promising potential for low-power-consumption display technologies.
DOI: 10.1038/s41566-025-01793-z
Source: https://www.nature.com/articles/s41566-025-01793-z