近日，南京工业大学的刘举庆及其研究团队取得一项新进展。经过不懈努力，他们提出一种用于精确无损存储读出的记忆光导转导方法。相关研究成果已于2024年7月23日在国际知名学术期刊《光：科学与应用》上发表。

该研究团队提出一种记忆-光导转导(MPT)方法，用于在记忆交叉阵列中精确和无损地读出。在电激励作用下，单个器件展现出动态灯丝形成与熔断的现象，用于电阻调制，从而在随后的光脉冲激励下产生可调谐光导响应的光生成载流子输运。这种相干信号转导可以直接检测存储在每个晶胞中的记忆开/关状态，并构建了一个原型4*4交叉存储器，验证了在调用过程中无串扰读出的保真度。

据悉，交叉电阻存储器架构实现了大容量存储和神经形态计算，准确检索存储信息是读取操作的先决条件。然而，传统的电读出过程复杂，由于潜行路径电流的串扰效应，读出结果不准确，具有破坏性。

附：英文原文

Title: A memristive-photoconductive transduction methodology for accurately nondestructive memory readout

Author: Zhou, Zhe, Wu, Yueyue, Pan, Keyuan, Zhu, Duoyi, Li, Zifan, Yan, Shiqi, Xin, Qian, Wang, Qiye, Qian, Xinkai, Xiu, Fei, Huang, Wei, Liu, Juqing

Issue&Volume: 2024-07-23

Abstract: Crossbar resistive memory architectures enable high-capacity storage and neuromorphic computing, accurate retrieval of the stored information is a prerequisite during read operation. However, conventional electrical readout normally suffer from complicated process, inaccurate and destructive reading due to crosstalk effect from sneak path current. Here we report a memristive-photoconductive transduction (MPT) methodology for precise and nondestructive readout in a memristive crossbar array. The individual devices present dynamic filament form/fuse for resistance modulation under electric stimulation, which leads to photogenerated carrier transport for tunable photoconductive response under subsequently light pulse stimuli. This coherent signal transduction can be used to directly detect the memorized on/off states stored in each cell, and a prototype 4*4 crossbar memories has been constructed and validated for the fidelity of crosstalk-free readout in recall process.

DOI: 10.1038/s41377-024-01519-w

Source: https://www.nature.com/articles/s41377-024-01519-w