近日，美国麻省理工学院的Raymond Ashoori&Pablo Jarillo-Herrero&Kenji Yasuda及其研究团队取得一项新进展。经过不懈努力，他们实现基于滑动铁电体的超快高耐久性存储器。相关研究成果已于2024年6月6日在国际权威学术期刊《科学》上发表。

该研究团队研究了基于滑动铁电的双层氮化硼铁电场效应晶体管(FeFET)在室温下的性能。滑动铁电体是一种独特的原子级薄二维铁电材料，其独特之处在于通过层间滑动运动实现面外极化的开关。研究人员探讨了采用单层石墨烯作为通道层的FeFET器件，该器件不仅展现了纳秒级的超快开关速度，还具备超过10¹¹个开关周期的高耐久性，性能可媲美当前最先进的FeFET器件。

这些显著特性彰显了二维滑动铁电体，在推动下一代非易失性存储技术发展方面的潜力。

据悉，电压可开关的集体电子现象已延伸至原子尺度，对面积效率和节能电子产品具有深远影响，特别是在新兴的非易失性存储技术中。

附：英文原文

Title: Ultrafast high-endurance memory based on sliding ferroelectrics

Author: Kenji Yasuda, Evan Zalys-Geller, Xirui Wang, Daniel Bennett, Suraj S Cheema, Kenji Watanabe, Takashi Taniguchi, Efthimios Kaxiras, Pablo Jarillo-Herrero, Raymond Ashoori

Issue&Volume: 2024-06-06

Abstract: The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area-efficient and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin two-dimensional ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 10¹¹ switching cycles, comparable to state-of-the-art FeFET devices. These characteristics highlight the potential of two-dimensional sliding ferroelectrics for inspiring next-generation nonvolatile memory technology.

DOI:10.1126/science.adp357

Source: https://www.science.org/doi/10.1126/science.adp3575