近日，中国科学院宁波材料技术与工程研究所的钟志诚等人合作并取得一项新进展。经过不懈努力，他们利用层间滑动开关开发了耐疲劳铁电体。相关研究成果已于2024年6月6日在国际权威学术期刊《科学》上发表。

该研究团队报道了一种基于双层3R-MoS₂滑动铁电的无疲劳铁电系统。该铁电器件的记忆性能在低周期时未表现出“唤醒效应”，在不同脉宽下10⁶个开关周期后也未表现出明显的“疲劳效应”。器件在电场作用下的总应力时间可达10⁵s，相对于其它器件而言，这是一个较长的应力时间。理论计算表明，滑动铁电的无疲劳特性是由于滑动铁电中的固定电荷缺陷引起的。

据悉，铁电材料因其具有可开关的电极化特性，对高密度非易失性存储器具有极高的吸引力。然而，这些材料在实际应用中却受到了不可避免的疲劳问题的限制。而无疲劳铁电开关的研发，则有望显著提升器件的耐久性。

附：英文原文

Title: Developing fatigue-resistant ferroelectrics using interlayer sliding switching

Author: Renji Bian, Ri He, Er Pan, Zefen Li, Guiming Cao, Peng Meng, Jiangang Chen, Qing Liu, Zhicheng Zhong, Wenwu Li, Fucai Liu

Issue&Volume: 2024-06-06

Abstract: Ferroelectric materials have switchable electrical polarization that is appealing for high density non-volatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R-MoS₂. The memory performance of this ferroelectric device does not show the “wake-up effect” at low cycles or a substantial “fatigue effect” after 10⁶ switching cycles under different pulse widths. The total stress time of device under an electric field is up to 10⁵ s, which is long relative to other devices. Our theoretical calculation uncovers that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity.

DOI: 10.1126/science.ado1744

Source: https://www.science.org/doi/10.1126/science.ado1744