近日，美国国家可再生能源实验室的Matthew C.Beard及其研究团队取得一项新进展。经过不懈努力，他们实现手性钙钛矿/ III-V界面的室温自旋注入。相关研究成果已于2024年6月19日在国际权威学术期刊《自然》上发表。

该研究团队展示了手性卤化物钙钛矿/ III-V界面上的自旋注入，实现了标准半导体III–V (Al_xGa_1-x)_0.5In_0.5P多量子阱发光二极管的自旋积累。他们通过发射偏振度高达15±4%的圆偏振光来检测多量子阱中的自旋积累。研究人员采用了多种先进的表征技术，包括X射线光电子能谱、横截面扫描开尔文探针力显微镜以及横截面透射电镜成像。

这些分析揭示了手性钙钛矿/III-V界面是一个洁净的半导体/半导体界面，并且在该界面上费米能级能够达到平衡。这些发现表明，手性钙钛矿半导体可以将开发良好的半导体平台转变为可以控制自旋的半导体平台。

据悉，室温和无磁场下半导体结构中的自旋积累是实现更广泛光电功能的关键。由于半导体界面上的自旋注入固有的低效率，目前的努力受到限制。

附：英文原文

Title: Room-temperature spin injection across a chiral perovskite/III–V interface

Author: Hautzinger, Matthew P., Pan, Xin, Hayden, Steven C., Ye, Jiselle Y., Jiang, Qi, Wilson, Mickey J., Phillips, Alan J., Dong, Yifan, Raulerson, Emily K., Leahy, Ian A., Jiang, Chun-Sheng, Blackburn, Jeffrey L., Luther, Joseph M., Lu, Yuan, Jungjohann, Katherine, Vardeny, Z. Valy, Berry, Joseph J., Alberi, Kirstin, Beard, Matthew C.

Issue&Volume: 2024-06-19

Abstract: Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of optoelectronic functionality. Current efforts are limited owing to inherent inefficiencies associated with spin injection across semiconductor interfaces. Here we demonstrate spin injection across chiral halide perovskite/III–V interfaces achieving spin accumulation in a standard semiconductor III–V (Al_xGa_1-x)_0.5In_0.5P multiple quantum well light-emitting diode. The spin accumulation in the multiple quantum well is detected through emission of circularly polarized light with a degree of polarization of up to 15±4%. The chiral perovskite/III–V interface was characterized with X-ray photoelectron spectroscopy, cross-sectional scanning Kelvin probe force microscopy and cross-sectional transmission electron microscopy imaging, showing a clean semiconductor/semiconductor interface at which the Fermi level can equilibrate. These findings demonstrate that chiral perovskite semiconductors can transform well-developed semiconductor platforms into ones that can also control spin.

DOI: 10.1038/s41586-024-07560-4

Source: https://www.nature.com/articles/s41586-024-07560-4