近日，中国科学院长春光学精密机械与物理研究所的黎大兵&孙晓娟及其研究团队取得一项新进展。经过不懈努力，他们研制出基于III-氮化物半导体的非易失性可重构双端电光双忆阻器。相关研究成果已于2024年3月29日在国际知名学术期刊《光：科学与应用》上发表。

本文在GaN/AlScN异质结构肖特基二极管上实现了电光双忆阻器。该双端忆阻器具有良好的电、光电非易失性和可重构性。无论是电学模式还是光电模式，电流开/关比均可达到10⁴量级，且电阻状态可有效复位、写入和长期存储。基于该器件，可以成功再现“IMP”真值表和逻辑“False”，表明该器件在内存传感和计算领域的巨大潜力。

据悉，随着人工智能(AI)、物联网(IOT)等技术的快速发展，人们迫切需要一种能够高效识别、存储和处理海量信息的技术。AlScN材料具有巨大的残余极化、优越的温度稳定性和与其他III -氮化物良好的晶格匹配等独特优势，易于与现有先进的III-氮化物材料和器件技术相集成。然而，由于AlScN的带隙大、矫顽力强、光生载流子产生和分离效率低，使得AlScN本身难以在表面/界面积累足够的光生载流子来诱导极化反转，限制了其在内存传感和计算中的应用。

附：英文原文

Title: Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on III-nitride semiconductors

Author: Xie, Zhiwei, Jiang, Ke, Zhang, Shanli, Ben, Jianwei, Liu, Mingrui, Lv, Shunpeng, Chen, Yang, Jia, Yuping, Sun, Xiaojuan, Li, Dabing

Issue&Volume: 2024-03-29

Abstract: With the fast development of artificial intelligence (AI), Internet of things (IOT), etc, there is an urgent need for the technology that can efficiently recognize, store and process a staggering amount of information. The AlScN material has unique advantages including immense remnant polarization, superior temperature stability and good lattice-match to other III-nitrides, making it easy to integrate with the existing advanced III-nitrides material and device technologies. However, due to the large band-gap, strong coercive field, and low photo-generated carrier generation and separation efficiency, it is difficult for AlScN itself to accumulate enough photo-generated carriers at the surface/interface to induce polarization inversion, limiting its application in in-memory sensing and computing. In this work, an electro-optic duplex memristor on a GaN/AlScN hetero-structure based Schottky diode has been realized. This two-terminal memristor shows good electrical and opto-electrical nonvolatility and reconfigurability. For both electrical and opto-electrical modes, the current on/off ratio can reach the magnitude of 10⁴, and the resistance states can be effectively reset, written and long-termly stored. Based on this device, the “IMP” truth table and the logic “False” can be successfully reproduced, indicating the huge potential of the device in the field of in-memory sensing and computing.

DOI: 10.1038/s41377-024-01422-4

Source: https://www.nature.com/articles/s41377-024-01422-4