近日，中国科学院上海微系统与信息技术研究所的欧欣&游天桂及其研究团队取得一项新进展。他们报道了在晶圆级InP-on-Si(100)非均质衬底上，生长具有宽工作温度范围的大功率、电驱动的1.55 μm 硅基多量子势阱激光器。相关研究成果已于2024年3月11日在国际知名学术期刊《光：科学与应用》上。

在本研究中，研究人员开发了一种在离子切割技术制备的InP-on-Si (100) (InPOS)非均质衬底上外延生长III-V的新型光子集成方法，以实现硅衬底上的集成激光器。这种离子切割加外延生长的方法解耦了在异质外延生长过程中许多有害位错的相关根源，即晶格和畴不匹配。

利用这种方法，研究人员实现了最先进的电泵浦连续波(CW) 1.55 μm硅基激光器的性能，室温阈值电流密度为0.65kA/cm^-2，并且在连续模式下，在没有晶体小面涂层的情况下，每个晶体小面的输出功率超过155mW。研究人员实现了120°C的连续激光和130°C以上的脉冲激光。这种通用方法也适用于其他材料系统，为光电子和微电子提供更好的性能和更多的功能。

据悉，可靠、高效和电泵浦的硅基激光器被认为是实现所有关键构建块与硅光子学集成的主要挑战。尽管在开发1.3 μm硅基量子点(QD)激光器方面取得了令人印象深刻的进展，但将波长窗口扩展到广泛使用的1.55 μm电信区域仍然很困难。

附：英文原文

Title: High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

Author: Sun, Jialiang, Lin, Jiajie, Zhou, Min, Zhang, Jianjun, Liu, Huiyun, You, Tiangui, Ou, Xin

Issue&Volume: 2024-03-11

Abstract: A reliable, efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon photonics. Despite the impressive advances that have been made in developing 1.3-μm Si-based quantum dot (QD) lasers, extending the wavelength window to the widely used 1.55-μm telecommunication region remains difficult. In this study, we develop a novel photonic integration method of epitaxial growth of III-V on a wafer-scale InP-on-Si (100) (InPOS) heterogeneous substrate fabricated by the ion-cutting technique to realize integrated lasers on Si substrate. This ion-cutting plus epitaxial growth approach decouples the correlated root causes of many detrimental dislocations during heteroepitaxial growth, namely lattice and domain mismatches. Using this approach, we achieved state-of-the-art performance of the electrically-pumped, continuous-wave (CW) 1.55-μm Si-based laser with a room-temperature threshold current density of 0.65kA/cm^-2, and output power exceeding 155mW per facet without facet coating in CW mode. CW lasing at 120°C and pulsed lasing at over 130°C were achieved. This generic approach is also applied to other material systems to provide better performance and more functionalities for photonics and microelectronics.

DOI: 10.1038/s41377-024-01389-2

Source: https://www.nature.com/articles/s41377-024-01389-2