近日，四川大学的王君及其研究团队取得一项新进展。经过不懈努力，他们实现功率转换效率高达74%的多结级联垂直腔面发射激光器。相关研究成果已于2024年2月28日在国际知名学术期刊《光：科学与应用》上发表。

本文将模型与实验相结合，论证了多结级联VCSEL的潜力，在室温下，20结VCSEL的效率可以高达88%以上。研究人员制作了不同结数的VCSEL器件，并比较了它们的能量效率。在纳秒驱动电流下，15结VCSELs在室温下的最大效率达到74%，相应的差分量子效率超过1100%，是目前报道的最大的VCSELs电光转换效率和差分量子效率。

这些结果不仅从理论上得到了证明，也在实验中得到了验证，为多结VCSELs在高效率半导体激光器领域的进一步开发和应用提供了宝贵的见解。

据悉，相较于其他类型的激光器，半导体激光器以其高电光转换效率而著称。然而，进一步提升这一效率仍是该领域的重要目标。边缘发射激光器（EEL）目前已成为半导体激光器中效率最高的类型，但如何进一步提高其效率仍是一个待解的挑战。与此同时，垂直腔面发射激光器（VCSELs）的效率一直相对较低。

附：英文原文

Title: Multi-junction cascaded vertical-cavity surface-emitting laser with a high power conversion efficiency of 74%

Author: Xiao, Yao, Wang, Jun, Liu, Heng, Miao, Pei, Gou, Yudan, Zhang, Zhicheng, Deng, Guoliang, Zhou, Shouhuan

Issue&Volume: 2024-02-28

Abstract: High electro-optical conversion efficiency is one of the most distinctive features of semiconductor lasers as compared to other types of lasers. Its further increase remains a significant objective. Further enhancing the efficiency of edge-emitting lasers (EEL), which represent the highest efficiency among semiconductor lasers at present, is challenging. The efficiency of vertical cavity surface emitting lasers (VCSELs) has always been relatively low compared to EEL. This paper, combining modeling with experiments, demonstrates the potential of multi-junction cascaded VCSELs to achieve high efficiency beyond that of EELs, our simulations show, that a 20-junction VCSEL can achieve an efficiency of more than 88% at room temperature. We fabricated VCSEL devices with different numbers of junctions and compared their energy efficiency. 15-junction VCSELs achieved a maximum efficiency of 74% at room temperature under nanosecond driving current, the corresponding differential quantum efficiency exceeds 1100%, being the largest electro-optical conversion efficiency and differential quantum efficiency reported until now for VCSELs. We have theoretically and experimentally proven the potential of multi-junction VCSELs to achieve high electro-optical conversion efficiency, providing insights for the further development and application of high efficiency semiconductor lasers.

DOI: 10.1038/s41377-024-01403-7

Source: https://www.nature.com/articles/s41377-024-01403-7