中国科学院物理所于晓辉团队报道了压力操纵拓扑绝缘体Ta₂Pd₃Te₅中突发超导电性的观测。相关研究成果发表在2024年1月31日出版的《美国化学会杂志》。

拓扑绝缘体具有巨大的潜力，可以彻底改变由其拓扑电子能带结构的非平凡表现驱动的不同领域。然而，在实际应用中实现奇异拓扑态和超导电性之间的卓越集成仍然是一个挑战，需要对复杂的机制有深入的了解。

该文中，研究人员报道了加压二阶拓扑绝缘体候选者Ta₂Pd₃Te₅中一种新型超导相的实验观测结果，高压相在高达45GPa的环境压力下保持其原始的晶格对称性。原位高压同步加速器X射线衍射、电输运、红外反射率和拉曼光谱测量，结合严格的理论计算，为超导行为和致密相之间的关联提供了令人信服的证据。

人们发现，大约20GPa的电子态变化直接改变了费米表面的拓扑结构，协同促进了强大超导性的出现。深入理解了压缩的Ta₂Pd₃Te₅相所表现出的迷人性质，突出了拓扑绝缘体在极端条件下探索和研究高性能电子先进器件的非凡潜力。

附：英文原文

Title: Observation of Emergent Superconductivity in the Topological Insulator Ta2Pd3Te5 via Pressure Manipulation

Author: Hui Yu, Dayu Yan, Zhaopeng Guo, Yizhou Zhou, Xue Yang, Peiling Li, Zhijun Wang, Xiaojun Xiang, Junkai Li, Xiaoli Ma, Rui Zhou, Fang Hong, Yunxiao Wuli, Youguo Shi, Jian-Tao Wang, Xiaohui Yu

Issue&Volume: January 31, 2024

Abstract: Topological insulators offer significant potential to revolutionize diverse fields driven by nontrivial manifestations of their topological electronic band structures. However, the realization of superior integration between exotic topological states and superconductivity for practical applications remains a challenge, necessitating a profound understanding of intricate mechanisms. Here, we report experimental observations for a novel superconducting phase in the pressurized second-order topological insulator candidate Ta2Pd3Te5, and the high-pressure phase maintains its original ambient pressure lattice symmetry up to 45 GPa. Our in situ high-pressure synchrotron X-ray diffraction, electrical transport, infrared reflectance, and Raman spectroscopy measurements, in combination with rigorous theoretical calculations, provide compelling evidence for the association between the superconducting behavior and the densified phase. The electronic state change around 20 GPa was found to modify the topology of the Fermi surface directly, which synergistically fosters the emergence of robust superconductivity. In-depth comprehension of the fascinating properties exhibited by the compressed Ta2Pd3Te5 phase is achieved, highlighting the extraordinary potential of topological insulators for exploring and investigating high-performance electronic advanced devices under extreme conditions.

DOI: 10.1021/jacs.3c11364

Source: https://pubs.acs.org/doi/abs/10.1021/jacs.3c11364