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标题：Catalytic growth and photoluminescence properties of semiconductor single-crystal ZnS nanowires
来源：《化学物理学通讯》2002年357卷3-4期314-318页
作者：中科院固体物理研究所 Ye-Wu Wang（王业伍）, Li-De Zhang（张立德）, Chang-Hao Liang（梁长浩）, Guo-Zhong Wang（汪国忠）, Xin-Sheng Peng（彭新生）
Research Fronts: SEMICONDUCTOR SINGLE-CRYSTAL ZNS NANOWIRES; WURTZITE ZNS; ZNS NANORIBBONS; WURTZITE POLYTYPE MODULATED STRUCTURE; ZINC SULFIDE NANOBELTS
领域：化学
摘要：Semiconductor single-crystal ZnS nanowires have been successfully synthesized in bulk quantities by a new, simple and low cost process based on thermal evaporation of ZnS powders onto a silicon substrate with the presence of Au catalyst. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) observations show that the ZnS nanowires have diameters about 30–60 nm and lengths up to several tens micrometers. The growth of ZnS nanowires is controlled by the conventional vapor–liquid–solid (VLS) mechanism. And the photoluminescence (PL) properties of these synthesized single-crystal ZnS nanowires have been presented in this Letter.
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